summary n-channel v (br)dss = 60v; r ds(on) = 0.045 ;i d = 5.1a p-channel v (br)dss = -60v; r ds(on) = 0.055 ;i d = -4.8a description this new generation of trench mosfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? low profile soic package applications ? motor drive ? lcd backlighting device marking zxmc 6a09 zxmc6a09dn8 issue 4 - may 2005 1 complementary 60v enhancement mode mosfet device reel tape width quantity per reel ZXMC6A09DN8TA 7 ?? 12mm 500 units zxmc6a09dn8tc 13?? 12mm 2500 units ordering information q2 = p-channel q1 = n-channel so8 top view pinout
zxmc6a09dn8 issue 4 - may 2005 2 parameter symbol v alue unit junction to ambient (a)(d) r ja 100 c/w junction to ambient (b)(e) r ja 69 c/w junction to ambient (b)(d) r ja 58 c/w thermal resistance notes: (a) for a dual device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper in still air conditions. (b) for a dual device surface mounted on fr4 pcb measured at t 10 sec. (c) repetitive rating 25mm x 25mm fr4 pcb, d=0.02, pulse width=300s - pulse width limited by maximum junction temperature. (d) for a dual device with one active die. (e) for a device with two active die running at equal power. parameter symbol n-channe l p-channel unit drain-source voltage v dss 60 -60 v gate-source voltage v gs 20 20 v continuous drain current@v gs =10v; t a =25 c (b)(d) @v gs =10v; t a =25 c (b)(d) @v gs =10v; t a =25 c (a)(d) i d 5.1 4.1 3.9 -4.8 -3.8 -3.7 a a pulsed drain current (c) i dm 25 -23 a continuous source current (body diode) (b) i s 3.5 -3.3 a pulsed source current (body diode) (c) i sm 25.4 -23.8 a power dissipation at t a =25c (a)(d) linear derating factor p d 1.25 10 w mw/c power dissipation at t a =25c (a)(e) linear derating factor p d 1.8 14 w mw/c power dissipation at t a =25c (b)(d) linear derating factor p d 2.1 17 w mw/c operating and storage temperature range t j :t stg -55 to +150 c absolute maximum ratings
zxmc6a09dn8 issue 4 - may 2005 3 characteristics
zxmc6a09dn8 issue 4 - may 2005 4 parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss 60 v i d =250 a, v gs =0v zero gate voltage drain current i dss 1.0 av ds =60v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) 1.0 v i d =250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.045 0.070 v gs =10v, i d =8.2a v gs =4.5v, i d =7.4a forward transconductance (1)(3) g fs 15 s v ds =15v,i d =8.2a dynamic (3) input capacitance c iss 1407 pf v ds =40v, v gs =0v, f=1mhz output capacitance c oss 121 pf reverse transfer capacitance c rss 59 pf switching (2) (3) turn-on delay time t d(on) 4.9 ns v dd =30v, i d =1.0a r g 6.0? ,v gs =10v rise time t r 3.3 ns turn-off delay time t d(off) 28.5 ns fall time t f 11.0 ns gate charge q g 12.4 nc v ds =15v,v gs =5v, i d =3.5a total gate charge q g 24.2 nc v ds =15v,v gs =10v, i d =3.5a gate-source charge q gs 5.2 nc gate-drain charge q gd 3.5 nc source-drain diode diode forward voltage (1) v sd 0.85 0.95 v t j =25c, i s =6.6a, v gs =0v reverse recovery time (3) t rr 26.3 ns t j =25c, i f =3.5a, di/dt= 100a/ s reverse recovery charge (3) q rr 26.6 nc n-channel electrical characteristics (at t amb = 25c unless otherwise stated) notes (1) measured under pulsed conditions. width 300s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
zxmc6a09dn8 issue 4 - may 2005 5 parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss -60 v i d =-250 a, v gs =0v zero gate voltage drain current i dss -1.0 av ds =-60v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) -1.0 v i d =-250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.055 0.080 v gs =-10v, i d =-3.5a v gs =-4.5v, i d =-2.9a forward transconductance (1)(3) g fs 8.7 s v ds =-15v,i d =-3.5a dynamic (3) input capacitance c iss 1580 pf v ds =-30 v, v gs =0v, f=1mhz output capacitance c oss 160 pf reverse transfer capacitance c rss 140 pf switching (2) (3) turn-on delay time t d(on) 4.6 ns v dd =-30v, i d =-1a r g 6.0? ,v gs =-10v rise time t r 5.8 ns turn-off delay time t d(off) 55 ns fall time t f 23 ns gate charge q g 23 nc v ds =-30v,v gs =-5v, i d =-3.5a total gate charge q g 44 nc v ds =-30v,v gs =-10v, i d =-3.5a gate-source charge q gs 3.9 nc gate-drain charge q gd 9.8 nc source-drain diode diode forward voltage (1) v sd -0.85 -0.95 v t j =25c, i s =-4.2a, v gs =0v reverse recovery time (3) t rr 37 ns t j =25c, i f =-2.1a, di/dt= 100a/ s reverse recovery charge (3) q rr 56 nc p-channel electrical characteristics (at t amb = 25c unless otherwise stated) notes (1) measured under pulsed conditions. width 300s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
zxmc6a09dn8 issue 4 - may 2005 6 n-channel typical characteristics
zxmc6a09dn8 issue 4 - may 2005 7 11 0 0 200 400 600 800 1000 1200 1400 1600 1800 c rss c oss c iss v gs =0v f=1mhz c capacitance (pf) v ds -drain-sourcevoltage(v) 0 5 10 15 20 25 0 2 4 6 8 10 i d =3.5a v ds = 15v gate-sourcevoltagevgatecharge capacitance v drain-source voltage q - charge (nc) v gs gate-source voltage (v) n-channel typical characteristics
zxmc6a09dn8 issue 4 - may 2005 8 p-channel typical characteristics
p-channel typical characteristics zxmc6a09dn8 issue 4 - may 2005 9
zxmc6a09dn8 issue 4 - may 2005 10 europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park chadderton, oldham, ol9 9ll united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex semiconductors plc 2005 package outline controlling dimensions are in inches approx in millimeters dim millimeters inches dim millimeters inches min max min max min max min max a 1.35 1.75 0.053 0.069 e 1.27 bsc 0.050 bsc a1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020 d 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010 h 5.80 6.20 0.228 0.244 0 8 0 8 e 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020 l 0.40 1.27 0.016 0.050 - ---- package dimensions
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